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MRF8S26120HR3 - RF Power Field Effect Transistor

Description

22 μF, 35 V Tantalum Capacitor 330 nF, 100 V Chip Capacitor 15 nF, 100 V Chip Capacitor 2.2 μF, 100 V Chip Capacitors 22 μF, 50 V Chip Capacitors 470 μF, 63 V Electrolytic Capacitors 27 pF Chip Capacitors 0.8 pF Chip Capacitor 1 kΩ, 1/4 W Chip Resistor 10 kΩ, 1/4 W Chip Resistor 7.5 Ω, 1/4 W Chip Re

Features

  • 100% PAR Tested for Guaranteed Output Power Capability.
  • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters.
  • Internally Matched for Ease of Use.
  • Integrated ESD Protection.
  • Greater Negative Gate--Source Voltage Range for Improved Class C Operation.
  • Designed for Digital Predistortion Error Correction Systems.
  • Optimized for Doherty.

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MRF8S26120HR3 RF Power Field Effect Transistor
MRF8S26120HSR3 RF Power Field Effect Transistor
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Full PDF Text Transcription

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Freescale Semiconductor Technical Data Document Number: MRF8S26120H www.DataSheet4U.com Rev. 0, 6/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA and LTE base station applications with frequencies from 2620 to 2690 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 900 mA, Pout = 28 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency 2620 MHz 2655 MHz 2690 MHz Gps (dB) 15.5 15.5 15.6 ηD (%) 31.5 31.1 31.1 Output PAR (dB) 6.3 6.3 6.2 ACPR (dBc) --38.0 --37.3 --36.7 MRF8S26120HR3 MRF8S26120HSR3 2620-2690 MHz, 28 W AVG.
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