Datasheet4U Logo Datasheet4U.com

MRF8S7120NR3 - RF Power Field Effect Transistor

General Description

Part Number MPZ2012S300AT000 ATC100B2R7BT500XT ATC100B101JT500XT ATC100B8R2CT500XT 476KXM050M ATC100B120JT500XT ATC100B5R6CT500XT ATC100B1R2BT500XT ATC100B390JT500XT C5750X7R1H106KT MCGPR63V477M13X26--RH ATC100B1R0BT500XT C4532X7R1H475MT CRCW12061K00FKEA CRCW12066R20JNEA TC350 TDK ATC ATC ATC Illino

Key Features

  • 100% PAR Tested for Guaranteed Output Power Capability.
  • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters.
  • Internally Matched for Ease of Use.
  • Integrated ESD Protection.
  • Greater Negative Gate--Source Voltage Range for Improved Class C Operation.
  • Designed for Digital Predistortion Error Correction Systems.
  • Optimized for Doherty.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MRF8S7170NR3 RF Power Field Effect Transistor Freescale Semiconductor
MRF8S7235NR3 RF Power Field Effect Transistor Freescale Semiconductor
MRF8S18120HR3 RF Power Field Effect Transistors Freescale Semiconductor
MRF8S18120HSR3 RF Power Field Effect Transistors Freescale Semiconductor
MRF8S18210WGHSR3 RF Power Field Effect Transistors Freescale Semiconductor

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MRF8S7120NR3 RF Power Field Effect Transistor
MRF8S26120HR3 RF Power Field Effect Transistor
MRF8S26120HR3 RF Power Field Effect Transistor
MRF8S26120HSR3 RF Power Field Effect Transistor
MRF8S26120HSR3 RF Power Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Freescale Semiconductor Technical Data Document Number: MRF8S7120N www.DataSheet4U.com Rev. 0, 5/2010 RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 600 mA, Pout = 32 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency 728 MHz 748 MHz 768 MHz Gps (dB) 19.2 19.2 19.2 ηD (%) 36.6 37.1 38.1 Output PAR (dB) 6.3 6.4 6.3 ACPR (dBc) --38.3 --38.2 --37.6 MRF8S7120NR3 728-768 MHz, 32 W AVG.