MRF8S7120NR3 - RF Power Field Effect Transistor

Product Overview

Motorola

Datasheet Details

Part number	MRF8S7120NR3
Manufacturer	Motorola
File Size	462.81 KB
Description	RF Power Field Effect Transistor
Datasheet	MRF8S7120NR3 Datasheet
Additional preview pages of the MRF8S7120NR3 datasheet.

Product details

Description

Part Number MPZ2012S300AT000 ATC100B2R7BT500XT ATC100B101JT500XT ATC100B8R2CT500XT 476KXM050M ATC100B120JT500XT ATC100B5R6CT500XT ATC100B1R2BT500XT ATC100B390JT500XT C5750X7R1H106KT MCGPR63V477M13X26--RH ATC100B1R0BT500XT C4532X7R1H475MT CRCW12061K00FKEA CRCW12066R20JNEA TC350 TDK ATC ATC ATC Illinois Cap ATC ATC ATC ATC TDK Multicomp ATC TDK Vishay Vishay Arlon Manufacturer MRF8S7120NR3 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS ηD ηD, DRAIN EFFICIENCY (%) 21 20.6 20.2 G

Features

100% PAR Tested for Guaranteed Output Power Capability.
Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters.
Internally Matched for Ease of Use.
Integrated ESD Protection.
Greater Negative Gate--Source Voltage Range for Improved Class C Operation.
Designed for Digital Predistortion Error Correction Systems.
Optimized for Doherty.

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Published: Aug 14, 2010 |