MRF8S26120HR3 Datasheet | Motorola Semiconductor

Freescale Semiconductor Technical Data Document Number: MRF8S26120H .. Rev. 0, 6/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA and LTE base station applications with frequencies from 2620 to 2690 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. - Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 900 mA, Pout = 28 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency 2620 MHz 2655 MHz 2690 MHz Gps (dB) 15.5 15.5 15.6 ηD (%) 31.5 31.1 31.1 Output PAR (dB) 6.3 6.3 6.2 ACPR...