MRF8S26120HSR3 - RF Power Field Effect Transistor

This page provides the datasheet information for the MRF8S26120HSR3, a member of the MRF8S26120HR3 RF Power Field Effect Transistor family.

Product Overview

Motorola

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Datasheet Details

Part number	MRF8S26120HSR3
Manufacturer	Motorola
File Size	534.11 KB
Description	RF Power Field Effect Transistor
Datasheet	MRF8S26120HSR3 Datasheet
Additional preview pages of the MRF8S26120HSR3 datasheet.

MRF8S26120HSR3 Product details

Description

22 μF, 35 V Tantalum Capacitor 330 nF, 100 V Chip Capacitor 15 nF, 100 V Chip Capacitor 2.2 μF, 100 V Chip Capacitors 22 μF, 50 V Chip Capacitors 470 μF, 63 V Electrolytic Capacitors 27 pF Chip Capacitors 0.8 pF Chip Capacitor 1 kΩ, 1/4 W Chip Resistor 10 kΩ, 1/4 W Chip Resistor 7.5 Ω, 1/4 W Chip Re

Features

100% PAR Tested for Guaranteed Output Power Capability.
Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters.
Internally Matched for Ease of Use.
Integrated ESD Protection.
Greater Negative Gate--Source Voltage Range for Improved Class C Operation.
Designed for Digital Predistortion Error Correction Systems.
Optimized for Doherty.

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Published: Aug 14, 2010 |