MRF8S26120HSR3 - RF Power Field Effect Transistor

Product Overview

Motorola

Datasheet Details

Part number	MRF8S26120HSR3
Manufacturer	Motorola
File Size	534.11 KB
Description	RF Power Field Effect Transistor
Datasheet	MRF8S26120HSR3 Datasheet
Note	This datasheet PDF includes multiple part numbers: MRF8S26120HSR3, MRF8S26120HR3. Please refer to the document for exact specifications by model.
Additional preview pages of the MRF8S26120HSR3 datasheet.

Product details

Description

22 μF, 35 V Tantalum Capacitor 330 nF, 100 V Chip Capacitor 15 nF, 100 V Chip Capacitor 2.2 μF, 100 V Chip Capacitors 22 μF, 50 V Chip Capacitors 470 μF, 63 V Electrolytic Capacitors 27 pF Chip Capacitors 0.8 pF Chip Capacitor 1 kΩ, 1/4 W Chip Resistor 10 kΩ, 1/4 W Chip Resistor 7.5 Ω, 1/4 W Chip Resistor 0.030″, εr = 3.5 Part Number T494X226K035AT C3225X7R2A334KT C3225C0G2A153JT C3225X7R2A225KT C5750JF1H226ZT MCGPR63V477M13X26--RH ATC800B270JT500XT ATC100B0R8BT500XT CRCW12061K00FKEA CRCW120610K

Features

100% PAR Tested for Guaranteed Output Power Capability.
Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters.
Internally Matched for Ease of Use.
Integrated ESD Protection.
Greater Negative Gate--Source Voltage Range for Improved Class C Operation.
Designed for Digital Predistortion Error Correction Systems.
Optimized for Doherty.

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Published: Aug 14, 2010 |