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MRF8S26120HSR3 - RF Power Field Effect Transistor

Download the MRF8S26120HSR3 datasheet PDF. This datasheet also covers the MRF8S26120HR3 variant, as both devices belong to the same rf power field effect transistor family and are provided as variant models within a single manufacturer datasheet.

Description

22 μF, 35 V Tantalum Capacitor 330 nF, 100 V Chip Capacitor 15 nF, 100 V Chip Capacitor 2.2 μF, 100 V Chip Capacitors 22 μF, 50 V Chip Capacitors 470 μF, 63 V Electrolytic Capacitors 27 pF Chip Capacitors 0.8 pF Chip Capacitor 1 kΩ, 1/4 W Chip Resistor 10 kΩ, 1/4 W Chip Resistor 7.5 Ω, 1/4 W Chip Re

Features

  • 100% PAR Tested for Guaranteed Output Power Capability.
  • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters.
  • Internally Matched for Ease of Use.
  • Integrated ESD Protection.
  • Greater Negative Gate--Source Voltage Range for Improved Class C Operation.
  • Designed for Digital Predistortion Error Correction Systems.
  • Optimized for Doherty.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF8S26120HR3_Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MRF8S26060HR3 RF Power Field Effect Transistors Motorola Semiconductor
MRF8S26060HSR3 RF Power Field Effect Transistors Motorola Semiconductor
MRF8S21140HR3 RF Power Field Effect Transistors NXP
MRF8S21140HSR3 RF Power Field Effect Transistors NXP
MRF8S21200HR6 RF Power Field Effect Transistors Freescale Semiconductor

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MRF8S26120HSR3 RF Power Field Effect Transistor
MRF8S26120HR3 RF Power Field Effect Transistor
MRF8S26120HR3 RF Power Field Effect Transistor
MRF8S7120NR3 RF Power Field Effect Transistor
MRF8S7120NR3 RF Power Field Effect Transistor

Full PDF Text Transcription

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Freescale Semiconductor Technical Data Document Number: MRF8S26120H www.DataSheet4U.com Rev. 0, 6/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA and LTE base station applications with frequencies from 2620 to 2690 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 900 mA, Pout = 28 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency 2620 MHz 2655 MHz 2690 MHz Gps (dB) 15.5 15.5 15.6 ηD (%) 31.5 31.1 31.1 Output PAR (dB) 6.3 6.3 6.2 ACPR (dBc) --38.0 --37.3 --36.7 MRF8S26120HR3 MRF8S26120HSR3 2620-2690 MHz, 28 W AVG.
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