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MRF9030SR1 - RF POWER FIELD EFFECT TRANSISTORS

This page provides the datasheet information for the MRF9030SR1, a member of the MRF9030R1 RF POWER FIELD EFFECT TRANSISTORS family.

Datasheet Summary

Features

  • .19 20.45 5.72 5.97 3.18 4.45 5.33 5.59 1.40 1.65 0.10 0.15 14.28 BSC 1.96 2.21 5.59 6.35 9.02 9.27 9.07 9.22 3.18 3.43 5.77 5.92 5.72 5.97 0.13 REF 0.25 REF 0.38 REF B (FLANGE) 2X 2 D bbb M T A 2X M K R (LID) B M ccc N (LID) M T A M B M ccc M T A C M B M H F E S (.

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Datasheet preview – MRF9030SR1

Datasheet Details

Part number MRF9030SR1
Manufacturer Motorola
File Size 404.83 KB
Description RF POWER FIELD EFFECT TRANSISTORS
Datasheet download datasheet MRF9030SR1 Datasheet
Additional preview pages of the MRF9030SR1 datasheet.

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Full PDF Text Transcription

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9030/D The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, common–source amplifier applications in 26 volt base station equipment. • Typical Two–Tone Performance at 945 MHz, 26 Volts Output Power — 30 Watts PEP Power Gain — 19 dB Efficiency — 41.5% IMD — –32.
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