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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Small Signal Line
NPN Silicon Low Voltage,
Low Current, Low Noise,
High-Frequency Transistors
Designed for use in low voltage, low current applications at frequencies to
2.0 GHz. Specifically aimed at portable communication devices such as
pagers and hand–held phones.
• High Gain (GUmax 15 dB Typ @ 1.0 GHz) @ 1.0 mA
• Small, Surface–Mount Package (SC–70)
• High Current Gain–Bandwidth Product at Low Current,
Low Voltage (fτ = 8.0 GHz Typ @ 3.0 V, 5.0 mA)
• Available in Tape and Reel by Adding T1 or T3 Suffix to Part Number.
T1 Suffix = 3,000 Units per 8 mm, 7 inch Reel.
T3 Suffix = 10,000 Units per 8 mm, 7 inch Reel.
Order this document
by MRF927T1/D
MRF927T1
MRF927T3
IC = 10 mA
LOW NOISE
HIGH FREQUENCY
TRANSISTOR
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TC = 50°C
Derate above 50°C
Storage Temperature Range
Operating Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction–to–Case
DEVICE MARKING
MRF927T1 = F
CASE 419–02, STYLE 3
(SC–70/SOT–323)
Symbol
VCEO
VCBO
VEBO
IC
PD
Tstg
TJ
Symbol
RθJC
Value
10
20
2.5
10
100
1.0
– 55 to +150
150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
°C
°C
Value
1000
Unit
°C/W
REV 1
©MMOotTorOolRa,OInLc.A19R97F DEVICE DATA
MRF927T1 MRF927T3
1
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