rnal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical sw.

that require the use of surface mount components with higher power and lower RDS(on) capabilities. This high voltage MOS.

MTB4N80E1

MTB40N10E

MTB4D0N03ATV8

MTB4D0N03BH8

MTB4D0N03BJ3

MTB4D0N03BQ8

MTB4D0N03BV8

MTB

MTB-F000329MNHNAA-B

MTB-F000368MNHNAA

MTB001

MTB001D01-1

MTB010A03H8

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