MTB4N80E - TMOS POWER FET

Product Overview

Motorola

Part number	MTB4N80E
Manufacturer	Motorola
File Size	195.75 KB
Description	TMOS POWER FET
Datasheet	MTB4N80E Datasheet
Additional preview pages of the MTB4N80E datasheet.

ance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain an.

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Published: Sep 13, 2005 |