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MTB4N80E TMOS POWER FET

MTB4N80E Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB4N80E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount Des.

MTB4N80E Features

* ance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasitics were

MTB4N80E Applications

* that require the use of surface mount components with higher power and lower RDS(on) capabilities. This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage
* blocking capability without degrading performance over time. In addition, this advanced TMOS E
* F

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Datasheet Details

Part number
MTB4N80E
Manufacturer
Motorola
File Size
195.75 KB
Datasheet
MTB4N80E_Motorola.pdf
Description
TMOS POWER FET

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TMOS POWER FET Motorola
Motorola MTB4N80E-like datasheet