MTB4D0N03ATV8 - N-Channel Enhancement Mode Power MOSFET

CYStech

Datasheet Details

Part number	MTB4D0N03ATV8
Manufacturer	CYStech
File Size	541.72 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTB4D0N03ATV8-CYStech.pdf

Single Drive Requirement.
Low On-resistance.
Fast Switching Characteristic.
Dynamic dv/dt rating.
Repetitive Avalanche Rated.
Pb-free lead plating and halogen-free package BVDSS ID @ VGS=10V VGS=10V, ID=15A RDSON(TYP) VGS=4.5V, ID=12A 30V 15A 4.7mΩ 6.7mΩ Equivalent Circuit MTB4D0N03ATV8 Outline Pin 1 DFN3×3 G：Gate D：Drain S：Source Ordering Information Device MTB4D0N03ATV8-0-T6-G Package DFN3×3 (Pb-free lead plating and halogen-free package) Shipping 3000 p.

📁 MTB4D0N03ATV8 Similar Datasheet

MTB4D0N03BH8 - N-Channel Logic Level Enhancement Mode Power MOSFET (Cystech Electonics)
MTB4D0N03BJ3 - N-Channel Logic Level Enhancement Mode Power MOSFET (Cystech Electonics)
MTB4D0N03BV8 - N-Channel Logic Level Enhancement Mode Power MOSFET (Cystech Electonics)
MTB40N10E - TMOS POWER FET (Motorola)
MTB4N80E - TMOS POWER FET (Motorola)
MTB4N80E1 - TMOS POWER FET (Motorola)
MTB - METALLIZED POLYESTER FILM CAPACITORS (RUBYCON CORPORATION)
MTB-F000329MNHNAA-B - LCD Module (Microtips)

Other Datasheets by CYStech

Published: Apr 28, 2016 |