Datasheet Specifications
- Part number
- MTB40N10E
- Manufacturer
- Motorola
- File Size
- 192.96 KB
- Datasheet
- MTB40N10E_Motorola.pdf
- Description
- TMOS POWER FET
Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB40N10E/D Advance Data Sheet TMOS E-FET.™ Power Field Effect Transistor N *C.
Features
* nd is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reApplications
* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.MTB40N10E Distributors
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