MTB1306 TMOS POWER FET

Motorola

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB1306/D Advance Information HDTMOS E-FET.™ High Density Power FET D2PAK for Surface.

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Datasheet Specifications

Part number: MTB1306
Manufacturer: Motorola
File Size: 176.55 KB
Datasheet: MTB1306_Motorola.pdf
Description: TMOS POWER FET

Features

* 000 0
* 10 VDS = 0 V Ciss VGS = 0 V Crss Ciss Coss Crss
* 5.0 VGS 0 VDS 5.0 10 15 20 25 VGS OR VDS, GATE
* TO
* SOURCE OR DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 4 Motorola TMOS Power MOSFET Transistor Device Data MTB1306 VGS

Applications

* that require the use of surface mount components with higher power and lower RDS(on) capabilities. This advanced high
* cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain
* to

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MTB1306 TMOS POWER FET Motorola

Motorola MTB1306-like datasheet