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MTB1306 - TMOS POWER FET

MTB1306 Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB1306/D Advance Information HDTMOS E-FET.™ High Density Power FET D2PAK for Surface.

MTB1306 Features

* 000 0
* 10 VDS = 0 V Ciss VGS = 0 V Crss Ciss Coss Crss
* 5.0 VGS 0 VDS 5.0 10 15 20 25 VGS OR VDS, GATE
* TO
* SOURCE OR DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 4 Motorola TMOS Power MOSFET Transistor Device Data MTB1306 VGS

MTB1306 Applications

* that require the use of surface mount components with higher power and lower RDS(on) capabilities. This advanced high
* cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain
* to

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Datasheet Details

Part number
MTB1306
Manufacturer
Motorola
File Size
176.55 KB
Datasheet
MTB1306_Motorola.pdf
Description
TMOS POWER FET

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TMOS POWER FET Motorola
Motorola MTB1306-like datasheet