* 000 0
* 10 VDS = 0 V Ciss VGS = 0 V Crss Ciss Coss Crss
* 5.0 VGS 0 VDS 5.0 10 15 20 25 VGS OR VDS, GATE
* TO
* SOURCE OR DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 4 Motorola TMOS Power MOSFET Transistor Device Data MTB1306 VGS
MTB1306
Motorola
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Tmos power fet.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Advance Information
HDTMOS E-FET.™ High Density Power FET D2PAK for Surface.
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