MTB20N20E TMOS POWER FET

Motorola

MTB20N20E Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB20N20E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount De.

MTB20N20E Features

* rmance is affected by the parasitic circuit elements. If the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops an

MTB20N20E Applications

* that require the use of surface mount components with higher power and lower RDS(on) capabilities. This advanced TMOS E
* FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain
* to
* source diode with a

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MTB20N20E Datasheet Preview — Preview of MTB20N20E PDF

Datasheet Details

Part number: MTB20N20E
Manufacturer: Motorola
File Size: 258.71 KB
Datasheet: MTB20N20E_Motorola.pdf
Description: TMOS POWER FET

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TMOS POWER FET Motorola

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