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MTB29N15E Datasheet - Motorola

MTB29N15E TMOS POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB29N15E/D Product Preview TMOS E-FET.™ Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate This advanced TMOS E FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain to source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converte.

MTB29N15E Datasheet (76.35 KB)

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Datasheet Details

Part number:

MTB29N15E

Manufacturer:

Motorola

File Size:

76.35 KB

Description:

Tmos power fet.

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MTB29N15E TMOS POWER FET Motorola

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