MTB23P06V Datasheet (Motorola)

MTB23P06V, TMOS POWER FET

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTB23P06V/D TMOS Power Field Effect Transistor D2PAK for Surface Mount TMOS V is a new technology designed to achieve an on resistance area product about one half that of standard MOSFETs.

This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices.

Just as with our TMOS E FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation

MTB23P06V Features

* of TMOS V

* On

* resistance Area Product about One

* half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology

* Faster Switching than E

* FET Predecessors ™ Data Sheet V™ MTB23P06V Motorola Preferred Device P

* Channel Enhancement