* proximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 800 700 600 C, CAPACITANCE (pF) 500 400 300 200 100 0 10 VDS = 0 V Ciss VGS = 0 V TJ = 25°C 1000 Ciss C, CAPACITANCE (pF) 100 Coss 10 Crss 1 T
MTB2N60E Datasheet (271.17 KB)
MTB2N60E
Motorola
271.17 KB
Tmos power fet.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB2N60E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount Des.
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