MTB2N60E Datasheet (Motorola)

MTB2N60E, TMOS POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB2N60E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount Designer's MTB2N60E Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage blocking capability without degrading performance over time.

In addition, this advanced TMOS E FET is designed to withstand high energy in the a

MTB2N60E Features

* proximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 800 700 600 C, CAPACITANCE (pF) 500 400 300 200 100 0 10 VDS = 0 V Ciss VGS = 0 V TJ = 25°C 1000 Ciss C, CAPACITANCE (pF) 100 Coss 10 Crss 1 T