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MTB2N60E TMOS POWER FET

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Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB2N60E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount Des.

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Datasheet Specifications

Part number
MTB2N60E
Manufacturer
Motorola
File Size
271.17 KB
Datasheet
MTB2N60E_Motorola.pdf
Description
TMOS POWER FET

Features

* proximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 800 700 600 C, CAPACITANCE (pF) 500 400 300 200 100 0 10 VDS = 0 V Ciss VGS = 0 V TJ = 25°C 1000 Ciss C, CAPACITANCE (pF) 100 Coss 10 Crss 1 T

Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Robust High Voltage Termination

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