Datasheet4U Logo Datasheet4U.com

MTB2N40E TMOS POWER FET

📥 Download Datasheet  Datasheet Preview Page 1

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB2N40E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount Des.

📥 Download Datasheet

Preview of MTB2N40E PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Specifications

Part number
MTB2N40E
Manufacturer
Motorola
File Size
271.38 KB
Datasheet
MTB2N40E_Motorola.pdf
Description
TMOS POWER FET

Features

* f the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are induc

Applications

* that require the use of surface mount components with higher power and lower RDS(on) capabilities. This advanced TMOS E
* FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain
* to
* source diode with a

MTB2N40E Distributors

📁 Related Datasheet

📌 All Tags

Motorola MTB2N40E-like datasheet