* f the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are induc
MTB2N40E Datasheet (271.38 KB)
MTB2N40E
Motorola
271.38 KB
Tmos power fet.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB2N40E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount Des.
📁 Related Datasheet
MTB2N60E TMOS POWER FET (Motorola)
MTB2N60E High Energy Power FET (ON Semiconductor)
LSD3561-XX Multilayer Ferrite Chip Beads (MAGNETIC)
LSD3765-XX Multilayer Ferrite Chip Beads (MAGNETIC)
LSD3554-XX Multilayer Ferrite Chip Beads (MAGNETIC)
LSD3552-XX Multilayer Ferrite Chip Beads (MAGNETIC)
LSD3551-XX Multilayer Ferrite Chip Beads (MAGNETIC)
LSD3553-XX Multilayer Ferrite Chip Beads (MAGNETIC)
LSD3763-XX Multilayer Ferrite Chip Beads (MAGNETIC)
LSD3555-XX Multilayer Ferrite Chip Beads (MAGNETIC)
