MTB2N40E TMOS POWER FET

Motorola

MTB2N40E Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB2N40E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount Des.

MTB2N40E Features

* f the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are induc

MTB2N40E Applications

* that require the use of surface mount components with higher power and lower RDS(on) capabilities. This advanced TMOS E
* FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain
* to
* source diode with a

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Datasheet Details

Part number: MTB2N40E
Manufacturer: Motorola
File Size: 271.38 KB
Datasheet: MTB2N40E_Motorola.pdf
Description: TMOS POWER FET

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TMOS POWER FET Motorola

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