Datasheet Specifications
- Part number
- MTB23P06E
- Manufacturer
- Motorola
- File Size
- 280.56 KB
- Datasheet
- MTB23P06E_Motorola.pdf
- Description
- TMOS POWER FET
Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB23P06E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount De.Features
* typical switching performance is affected by the parasitic circuit elements. If the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain anApplications
* that require the use of surface mount components with higher power and lower RDS(on) capabilities. This advanced TMOS EMTB23P06E Distributors
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