Datasheet4U Logo Datasheet4U.com

MTB23P06E TMOS POWER FET

📥 Download Datasheet  Datasheet Preview Page 1

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB23P06E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount De.

📥 Download Datasheet

Preview of MTB23P06E PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Specifications

Part number
MTB23P06E
Manufacturer
Motorola
File Size
280.56 KB
Datasheet
MTB23P06E_Motorola.pdf
Description
TMOS POWER FET

Features

* typical switching performance is affected by the parasitic circuit elements. If the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain an

Applications

* that require the use of surface mount components with higher power and lower RDS(on) capabilities. This advanced TMOS E
* FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain
* to
* source diode with a

MTB23P06E Distributors

📁 Related Datasheet

📌 All Tags

Motorola MTB23P06E-like datasheet