* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* RoHS compliant and halogen-free package BVDSS ID RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=20A 60V 42A 14.6 mΩ(typ) 16.7 mΩ(typ) Symbol MTB20N06J3 Outline
MTB20N06J3 Datasheet (261.44 KB)
MTB20N06J3
Cystech Electonics
261.44 KB
N-channel mosfet.
CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET Spec. No. : C925J3 Issued Date : 2013.08.13 Revised Date : 2013.12.30 Page No. : 1/.
📁 Related Datasheet
MTB20N06J3-T3-G N-Channel MOSFET (Cystech Electonics)
MTB20N06FP N-Channel Enhancement Mode Power MOSFET (CYStech)
MTB20N03AQ8 N-Channel MOSFET (Cystech Electonics)
MTB20N03Q8 N-Channel MOSFET (Cystech Electonics)
MTB20N04J3 N-Channel Enhancement Mode Power MOSFET (CYStech)
MTB20N20E TMOS POWER FET (Motorola)
LSD3561-XX Multilayer Ferrite Chip Beads (MAGNETIC)
LSD3765-XX Multilayer Ferrite Chip Beads (MAGNETIC)
LSD3554-XX Multilayer Ferrite Chip Beads (MAGNETIC)
LSD3552-XX Multilayer Ferrite Chip Beads (MAGNETIC)
