* RDSON(TYP) VGS=10V, ID=10A VGS=4.5V, ID=8A
* Low Gate Charge
* Simple Drive Requirement
* Pb-free lead plating package 40V 23A 16.3A 17.5mΩ 20.8mΩ Equivalent Circuit MTB20N04J3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTB20N04J3
MTB20N04J3 Datasheet (389.76 KB)
MTB20N04J3
CYStech
389.76 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp. Spec. No. : C978J3 Issued Date : 2015.01.05 Revised Date : Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET MTB20N.
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