* Simple drive requirement
* Low on-resistance
* Fast switching speed
* Dual N-ch MOSFET package
* ESD protected gate
* Pb-free lead plating & Halogen-free package BVDSS ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDSON@VGS=10V, ID=2A RDSON@VGS=4.5V, ID=2
MTB100A10KRQ8 Datasheet (402.82 KB)
MTB100A10KRQ8
Cystech Electonics
402.82 KB
Dual n-channel enhancement mode power mosfet.
CYStech Electronics Corp.
Dual N-Channel Enhancement Mode Power MOSFET
MTB100A10KRQ8
Spec. No. : C059Q8 Issued Date : 2016.09.22 Revised Date : Page .
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