MTB100A10KRQ8 - Dual N-Channel Enhancement Mode Power MOSFET
MTB100A10KRQ8 Features
* Simple drive requirement
* Low on-resistance
* Fast switching speed
* Dual N-ch MOSFET package
* ESD protected gate
* Pb-free lead plating & Halogen-free package BVDSS ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDSON@VGS=10V, ID=2A RDSON@VGS=4.5V, ID=2
