* Low gate charge
* Compact and low profile SOT-23 package
* Advanced trench process technology
* High density cell design for ultra low on resistance
* ESD protected gate
* Pb-free lead plating package Symbol MTB110P08KN3 Outline SOT-23 D Gļ¼Gate S
MTB110P08KN3 Datasheet (416.13 KB)
MTB110P08KN3
Cystech Electonics
416.13 KB
P-channel enhancement mode mosfet.
CYStech Electronics Corp.
Spec. No. : C123N3 Issued Date : 2015.11.09
Revised Date : Page No. : 1/9
-80V P-Channel Enhancement Mode MOSFET
MTB110P08.
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