MTB110P08KJ3 - P-Channel Enhancement Mode Power MOSFET

Product Overview

Cystech Electonics

Part number	MTB110P08KJ3
Manufacturer	Cystech Electonics
File Size	409.57 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	MTB110P08KJ3 Datasheet
Additional preview pages of the MTB110P08KJ3 datasheet.

Low Gate Charge.
Simple Drive Requirement.
ESD Protected Gate.
Pb-free Lead Plating & Halogen-free Package -80V -11.3A -3.2A 103mΩ(typ) 141mΩ(typ) Equivalent Circuit MTB110P08KJ3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTB110P08KJ3-0-T3-G Package TO-252 (Pb-free lead plating & halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant a.

📁 Similar Datasheet

MTB11N03BQ8 - N-Channel Logic Level Enhancement Mode Power MOSFET (CYStech Electronics)
MTB11N03BV8 - N-Channel Logic Level Enhancement Mode Power MOSFET (CYStech Electronics)
MTB10000 - LED Lamp Arrays (Marktech Corporate)
MTB10010U - NPN microwave power transistor (NXP)
MTB10062 - Bi-Color LED Lamp Array (Marktech Corporate)
MTB100A06KRH8 - Dual N-Channel Enhancement Mode Power MOSFET (CYStech)
MTB10N40E - TMOS POWER FET (Motorola)
MTB1306 - TMOS POWER FET (Motorola)

Other Datasheets by Cystech Electonics

Published: Sep 4, 2016 |