* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* ESD protected gate
* Pb-free lead plating and Halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=100°C ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=2.
MTB100A06KRH8 Datasheet (858.46 KB)
MTB100A06KRH8
CYStech
858.46 KB
Dual n-channel enhancement mode power mosfet.
CYStech Electronics Corp.
Spec. No. : C666H8 Issued Date : 2019.12.13 Revised Date : Page No. : 1/ 10
Dual N-Channel Enhancement Mode Power MOSFET
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