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MTB100A06KRH8 - Dual N-Channel Enhancement Mode Power MOSFET

MTB100A06KRH8 Description

CYStech Electronics Corp.Spec.No.: C666H8 Issued Date : 2019.12.13 Revised Date : Page No.: 1/ 10 Dual N-Channel Enhancement Mode Power MOSFET .

MTB100A06KRH8 Features

* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* ESD protected gate
* Pb-free lead plating and Halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=100°C ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=2.

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Datasheet Details

Part number
MTB100A06KRH8
Manufacturer
CYStech
File Size
858.46 KB
Datasheet
MTB100A06KRH8-CYStech.pdf
Description
Dual N-Channel Enhancement Mode Power MOSFET

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Dual N-Channel Enhancement Mode Power MOSFET CYStech
CYStech MTB100A06KRH8-like datasheet