MTB100A06KRH8 - Dual N-Channel Enhancement Mode Power MOSFET

Product Overview

CYStech

Part number	MTB100A06KRH8
Manufacturer	CYStech
File Size	858.46 KB
Description	Dual N-Channel Enhancement Mode Power MOSFET
Datasheet	MTB100A06KRH8 Datasheet
Additional preview pages of the MTB100A06KRH8 datasheet.

Low On Resistance.
Simple Drive Requirement.
Low Gate Charge.
Fast Switching Characteristic.
ESD protected gate.
Pb-free lead plating and Halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=100°C ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=2.2A RDS(ON)@VGS=4.5V, ID=1.3A RDS(ON)@VGS=3.3V, ID=1A 60V 11.3A 7.1A 3.2A 2.6A 82mΩ(typ) 116mΩ(typ) 183mΩ(typ) Equivalent Circuit MTB100A06KRH8 Outline Pin 1 DFN5×6 Pin 1 G：Gate D：Drain S：Source.

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Published: Mar 7, 2020 |