* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=50A 40V 180A 20A 1.7mΩ(typ) Symbol MTB1D8N04E3 Outline TO-220 G：Gate D：Drain S：Source
MTB1D8N04E3 Datasheet (633.30 KB)
MTB1D8N04E3
CYStech
633.30 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTB1D8N04E3
Spec. No. : C007E3 Issued Date : 2018.10.18 Revised Date : Page No. : 1.
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