MTB1D8N04E3 - N-Channel Enhancement Mode Power MOSFET
MTB1D8N04E3 Features
* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=50A 40V 180A 20A 1.7mΩ(typ) Symbol MTB1D8N04E3 Outline TO-220 G：Gate D：Drain S：Source
