MTB1D8N04E3 - N-Channel Enhancement Mode Power MOSFET

Product Overview

CYStech

Part number	MTB1D8N04E3
Manufacturer	CYStech
File Size	633.30 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTB1D8N04E3 Datasheet
Additional preview pages of the MTB1D8N04E3 datasheet.

Low On Resistance.
Simple Drive Requirement.
Low Gate Charge.
Fast Switching Characteristic.
RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=50A 40V 180A 20A 1.7mΩ(typ) Symbol MTB1D8N04E3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information Device Package Shipping MTB1D8N04E3-0-UB-X TO-220 (Pb-free lead plating package) 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS co.

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Published: Mar 14, 2020 |