MTB1D8N04E3 N-Channel Enhancement Mode Power MOSFET

CYStech

Description

CYStech Electronics Corp.N-Channel Enhancement Mode Power MOSFET MTB1D8N04E3 Spec.No.: C007E3 Issued Date : 2018.10.18 Revised Date : Page No.: 1.

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Datasheet Specifications

Part number: MTB1D8N04E3
Manufacturer: CYStech
File Size: 633.30 KB
Datasheet: MTB1D8N04E3-CYStech.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=50A 40V 180A 20A 1.7mΩ(typ) Symbol MTB1D8N04E3 Outline TO-220 G：Gate D：Drain S：Source

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MTB1D8N04E3 N-Channel Enhancement Mode Power MOSFET CYStech

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