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MTB100N10RKJ3 Datasheet - Cystech Electonics

MTB100N10RKJ3 - N-Channel Enhancement Mode Power MOSFET

MTB100N10RKJ3 Features

* Low Gate Charge

* Simple Drive Requirement

* ESD protected gate

* Pb-free lead plating & Halogen-free package BVDSS ID@VGS=10V, TC=25°C RDSON@VGS=10V, ID=8A RDSON@VGS=4.5V, ID=6A 100V 10A 108mΩ(TYP) 123mΩ(TYP) Equivalent Circuit MTB100N10RKJ3 Outline TO-252(DPA

MTB100N10RKJ3-CystechElectonics.pdf

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Datasheet Details

Part number:

MTB100N10RKJ3

Manufacturer:

Cystech Electonics

File Size:

348.08 KB

Description:

N-channel enhancement mode power mosfet.

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