* Low Gate Charge
* Simple Drive Requirement
* ESD protected gate
* Pb-free lead plating & Halogen-free package BVDSS ID@VGS=10V, TC=25°C RDSON@VGS=10V, ID=8A RDSON@VGS=4.5V, ID=6A 100V 10A 108mΩ(TYP) 123mΩ(TYP) Equivalent Circuit MTB100N10RKJ3 Outline TO-252(DPA
MTB100N10RKJ3 Datasheet (348.08 KB)
MTB100N10RKJ3
Cystech Electonics
348.08 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp.
N -Channel Enhancement Mode Power MOSFET
MTB100N10RKJ3
Spec. No. : C059J3 Issued Date : 2016.09.01 Revised Date : Page No. .
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