Part number:
MTB100N10RKJ3
Manufacturer:
Cystech Electonics
File Size:
348.08 KB
Description:
N-channel enhancement mode power mosfet.
MTB100N10RKJ3 Datasheet (348.08 KB)
Datasheet Details
MTB100N10RKJ3 Features
* Low Gate Charge
* Simple Drive Requirement
* ESD protected gate
* Pb-free lead plating & Halogen-free package BVDSS ID@VGS=10V, TC=25°C RDSON@VGS=10V, ID=8A RDSON@VGS=4.5V, ID=6A 100V 10A 108mΩ(TYP) 123mΩ(TYP) Equivalent Circuit MTB100N10RKJ3 Outline TO-252(DPA
MTB100N10RKJ3 Datasheet (348.08 KB)
Datasheet Details
MTB100N10RKJ3
Cystech Electonics
348.08 KB
N-channel enhancement mode power mosfet.
📁 Related Datasheet
MTB10000 LED Lamp Arrays (Marktech Corporate)
MTB10010U NPN microwave power transistor (NXP)
MTB10062 Bi-Color LED Lamp Array (Marktech Corporate)
MTB100A06KRH8 Dual N-Channel Enhancement Mode Power MOSFET (CYStech)
MTB100A10KRH8 Dual N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTB100A10KRQ8 Dual N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTB10N40E TMOS POWER FET (Motorola)
MTB110P08KJ3 P-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTB100N10RKJ3 Distributor