MTB100N10RKJ3 Datasheet - Cystech Electonics

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MTB100N10RKJ3 N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.N -Channel Enhancement Mode Power MOSFET MTB100N10RKJ3 Spec.No.: C059J3 Issued Date : 2016.09.01 Revised Date : Page No..

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Datasheet Details

Part number:

MTB100N10RKJ3

Manufacturer:

Cystech Electonics

File Size:

348.08 KB

Description:

N-Channel Enhancement Mode Power MOSFET

Features

* Low Gate Charge
* Simple Drive Requirement
* ESD protected gate
* Pb-free lead plating & Halogen-free package BVDSS ID@VGS=10V, TC=25°C RDSON@VGS=10V, ID=8A RDSON@VGS=4.5V, ID=6A 100V 10A 108mΩ(TYP) 123mΩ(TYP) Equivalent Circuit MTB100N10RKJ3 Outline TO-252(DPA

MTB100N10RKJ3 Distributors

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MTB100N10RKJ3 N-Channel Enhancement Mode Power MOSFET Cystech Electonics

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