MTB100N10RKJ3 - N-Channel Enhancement Mode Power MOSFET
MTB100N10RKJ3 Features
* Low Gate Charge
* Simple Drive Requirement
* ESD protected gate
* Pb-free lead plating & Halogen-free package BVDSS ID@VGS=10V, TC=25°C RDSON@VGS=10V, ID=8A RDSON@VGS=4.5V, ID=6A 100V 10A 108mΩ(TYP) 123mΩ(TYP) Equivalent Circuit MTB100N10RKJ3 Outline TO-252(DPA
