MTB110P08KN6 P-Channel Enhancement Mode Power MOSFET

Cystech Electonics

Description

CYStech Electronics Corp.Spec.No.: C123N6 Issued Date : 2015.11.24 Revised Date : Page No.: 1/8 -80V P-Channel Enhancement Mode Power MOSFET MTB.

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Datasheet Specifications

Part number: MTB110P08KN6
Manufacturer: Cystech Electonics
File Size: 461.80 KB
Datasheet: MTB110P08KN6-CystechElectonics.pdf
Description: P-Channel Enhancement Mode Power MOSFET

Features

* Simple drive requirement
* Low on-resistance
* Small package outline
* Pb-free lead plating and halogen-free package
* ESD protected gate Equivalent Circuit MTB110P08KN6 G：Gate S：Source D：Drain Absolute Maximum Ratings (Ta=25°C) Drain-Source Voltage Gate

Applications

* or systems.
* CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB110P08KN6 CYStek Product Specification

MTB110P08KN6 Distributors

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MTB110P08KN6 P-Channel Enhancement Mode Power MOSFET Cystech Electonics

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