* Simple drive requirement
* Low on-resistance
* Small package outline
* Pb-free lead plating and halogen-free package
* ESD protected gate Equivalent Circuit MTB110P08KN6 G：Gate S：Source D：Drain Absolute Maximum Ratings (Ta=25°C) Drain-Source Voltage Gate
MTB110P08KN6 Datasheet (461.80 KB)
MTB110P08KN6
Cystech Electonics
461.80 KB
P-channel enhancement mode power mosfet.
CYStech Electronics Corp.
Spec. No. : C123N6 Issued Date : 2015.11.24 Revised Date : Page No. : 1/8
-80V P-Channel Enhancement Mode Power MOSFET
MTB.
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