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MTB110P08KN6 Datasheet - Cystech Electonics

MTB110P08KN6 P-Channel Enhancement Mode Power MOSFET

MTB110P08KN6 Features

* Simple drive requirement

* Low on-resistance

* Small package outline

* Pb-free lead plating and halogen-free package

* ESD protected gate Equivalent Circuit MTB110P08KN6 G：Gate S：Source D：Drain Absolute Maximum Ratings (Ta=25°C) Drain-Source Voltage Gate

MTB110P08KN6 Datasheet (461.80 KB)

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Datasheet Details

Part number:

MTB110P08KN6

Manufacturer:

Cystech Electonics

File Size:

461.80 KB

Description:

P-channel enhancement mode power mosfet.

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TAGS

MTB110P08KN6 P-Channel Enhancement Mode Power MOSFET Cystech Electonics

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