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MTB115P10KJ3 P-Channel Enhancement Mode Power MOSFET

MTB115P10KJ3 Description

Spec.No.: C891J3 CYStech Electronics Corp.Issued Date : 2016.12.23 Revised Date : P-Channel Enhancement Mode Power MOSFET MTB115P10KJ3 .

MTB115P10KJ3 Features

* Low Gate Charge
* Simple Drive Requirement
* ESD Protected Gate
* Pb-free Lead Plating & Halogen-free Package BVDSS ID@VGS=-10V, TC=25°C RDS(ON)@VGS=-10V, ID=-10A RDS(ON)@VGS=-4.5V, ID=-8A -100V -15A 82mΩ(typ) 107mΩ(typ) Equivalent Circuit MTB115P10KJ3 Outline

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Datasheet Details

Part number
MTB115P10KJ3
Manufacturer
Cystech Electonics
File Size
346.04 KB
Datasheet
MTB115P10KJ3-CystechElectonics.pdf
Description
P-Channel Enhancement Mode Power MOSFET

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P-Channel Enhancement Mode Power MOSFET Cystech Electonics
Cystech Electonics MTB115P10KJ3-like datasheet