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MTB115P10KJ3 Datasheet - Cystech Electonics

MTB115P10KJ3 - P-Channel Enhancement Mode Power MOSFET

MTB115P10KJ3 Features

* Low Gate Charge

* Simple Drive Requirement

* ESD Protected Gate

* Pb-free Lead Plating & Halogen-free Package BVDSS ID@VGS=-10V, TC=25°C RDS(ON)@VGS=-10V, ID=-10A RDS(ON)@VGS=-4.5V, ID=-8A -100V -15A 82mΩ(typ) 107mΩ(typ) Equivalent Circuit MTB115P10KJ3 Outline

MTB115P10KJ3-CystechElectonics.pdf

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Datasheet Details

Part number:

MTB115P10KJ3

Manufacturer:

Cystech Electonics

File Size:

346.04 KB

Description:

P-channel enhancement mode power mosfet.

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MTB115P10KJ3 P-Channel Enhancement Mode Power MOSFET Cystech Electonics