MTB100A10KRH8 Dual N-Channel Enhancement Mode Power MOSFET

Cystech Electonics

Description

CYStech Electronics Corp.Spec.No.: C059H8 Issued Date : 2016.11.01 Revised Date : 2018.04.16 Page No.: 1/ 10 Dual N-Channel Enhancement Mode Pow.

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Datasheet Specifications

Part number: MTB100A10KRH8
Manufacturer: Cystech Electonics
File Size: 831.41 KB
Datasheet: MTB100A10KRH8-CystechElectonics.pdf
Description: Dual N-Channel Enhancement Mode Power MOSFET

Features

* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=2A RDS(ON)@VGS=4.5V, ID=2A
* Fast Switching Characteristic
* ESD protected gate
* Pb-free lead plating and Halogen-free pac

MTB100A10KRH8 Distributors

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MTB100A10KRH8 Dual N-Channel Enhancement Mode Power MOSFET Cystech Electonics

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