* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=2A RDS(ON)@VGS=4.5V, ID=2A
* Fast Switching Characteristic
* ESD protected gate
* Pb-free lead plating and Halogen-free pac
MTB100A10KRH8 Datasheet (831.41 KB)
MTB100A10KRH8
Cystech Electonics
831.41 KB
Dual n-channel enhancement mode power mosfet.
CYStech Electronics Corp.
Spec. No. : C059H8 Issued Date : 2016.11.01 Revised Date : 2018.04.16 Page No. : 1/ 10
Dual N-Channel Enhancement Mode Pow.
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