MTB100A10KRH8 Datasheet - Cystech Electonics

MTB100A10KRH8 Dual N-Channel Enhancement Mode Power MOSFET

MTB100A10KRH8 Features

* Low On Resistance

* Simple Drive Requirement

* Low Gate Charge ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=2A RDS(ON)@VGS=4.5V, ID=2A

* Fast Switching Characteristic

* ESD protected gate

* Pb-free lead plating and Halogen-free pac

Datasheet Details

MTB100A10KRH8

Cystech Electonics

831.41 KB

Dual n-channel enhancement mode power mosfet.

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