MTB1D8NR03E3 N-Channel Enhancement Mode Power MOSFET

CYStech

Description

CYStech Electronics Corp.N-Channel Enhancement Mode Power MOSFET MTB1D8NR03E3 Spec.No.: C948E3 Issued Date : 2015.05.08 Revised Date : Page No.: .

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Datasheet Specifications

Part number: MTB1D8NR03E3
Manufacturer: CYStech
File Size: 357.56 KB
Datasheet: MTB1D8NR03E3-CYStech.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* Low Gate Charge
* Simple Drive Requirement
* Fast Switching Characteristic
* RoHS compliant package BVDSS ID @VGS=10V, TC=25°C RDSON(TYP) @ VGS=10V, ID=30A RDSON(TYP) @ VGS=4.5V, ID=20A 30V 180A 2.7mΩ 3.3mΩ Symbol MTB1D8NR03E3 Outline TO-220 G：Gate D：Drain S：So

MTB1D8NR03E3 Distributors

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MTB1D8NR03E3 N-Channel Enhancement Mode Power MOSFET CYStech

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