* Low Gate Charge
* Simple Drive Requirement
* Fast Switching Characteristic
* RoHS compliant package BVDSS ID @VGS=10V, TC=25°C RDSON(TYP) @ VGS=10V, ID=30A RDSON(TYP) @ VGS=4.5V, ID=20A 30V 180A 2.7mΩ 3.3mΩ Symbol MTB1D8NR03E3 Outline TO-220 G：Gate D：Drain S：So
MTB1D8NR03E3 Datasheet (357.56 KB)
MTB1D8NR03E3
CYStech
357.56 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTB1D8NR03E3
Spec. No. : C948E3 Issued Date : 2015.05.08 Revised Date : Page No. : .
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