MTB1D5N03H8 - N-Channel Enhancement Mode Power MOSFET
MTB1D5N03H8 Features
* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* Pb-free lead plating and Halogen-free package RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=20A 30V 156A(silicon limit) 84A(package limit) 23.5A 1.3mΩ(typ) 1.6m
