MTB1D5N03H8 N-Channel Enhancement Mode Power MOSFET

Cystech Electonics

Description

CYStech Electronics Corp.Spec.No.: C984H8 Issued Date : 2017.01.06 Revised Date : Page No.: 1/ 10 N-Channel Enhancement Mode Power MOSFET MTB1D.

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Datasheet Specifications

Part number: MTB1D5N03H8
Manufacturer: Cystech Electonics
File Size: 549.80 KB
Datasheet: MTB1D5N03H8-CystechElectonics.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* Pb-free lead plating and Halogen-free package RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=20A 30V 156A(silicon limit) 84A(package limit) 23.5A 1.3mΩ(typ) 1.6m

MTB1D5N03H8 Distributors

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MTB1D5N03H8 N-Channel Enhancement Mode Power MOSFET Cystech Electonics

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