MTB1D7N03ATH8 - N-Channel Enhancement Mode Power MOSFET
MTB1D7N03ATH8 Features
* Single Drive Requirement
* Low On-resistance
* Fast Switching Characteristic
* Pb-free lead plating and Halogen-free package BVDSS ID @VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=30A RDS(ON)@VGS=4.5V, ID=20A 30V 90A 1.5 mΩ(typ) 2.1 mΩ(typ) Symbol MTB1D7N03ATH8 Outline Pin 1 DFN5×6 G
