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MTB180A06KH8 - Dual N-Channel Enhancement Mode Power MOSFET

MTB180A06KH8 Description

CYStech Electronics Corp.Spec.No.: C052H8 Issued Date : 2019.09.06 Revised Date : Page No.: 1/ 10 Dual N-Channel Enhancement Mode Power MOSFET .

MTB180A06KH8 Features

* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* ESD protected gate
* Pb-free lead plating and Halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=100°C ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=2.

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Datasheet Details

Part number
MTB180A06KH8
Manufacturer
CYStech
File Size
832.11 KB
Datasheet
MTB180A06KH8-CYStech.pdf
Description
Dual N-Channel Enhancement Mode Power MOSFET

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Dual N-Channel Enhancement Mode Power MOSFET CYStech
CYStech MTB180A06KH8-like datasheet