MTB180A06KH8 - Dual N-Channel Enhancement Mode Power MOSFET

Product Overview

CYStech

Part number	MTB180A06KH8
Manufacturer	CYStech
File Size	832.11 KB
Description	Dual N-Channel Enhancement Mode Power MOSFET
Datasheet	MTB180A06KH8 Datasheet
Additional preview pages of the MTB180A06KH8 datasheet.

Low On Resistance.
Simple Drive Requirement.
Low Gate Charge.
Fast Switching Characteristic.
ESD protected gate.
Pb-free lead plating and Halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=100°C ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=2.2A RDS(ON)@VGS=4.5V, ID=1.3A RDS(ON)@VGS=3.3V, ID=1A 60V 8.05A 5.09A 2.3A 1.8A 172mΩ(typ) 204mΩ(typ) 390mΩ(typ) Equivalent Circuit MTB180A06KH8 Outline Pin 1 DFN5×6 Pin 1 G：Gate D：Drain S：Source.

📁 Similar Datasheet

MTB180N06KSN3 - N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTB10000 - LED Lamp Arrays (Marktech Corporate)
MTB10010U - NPN microwave power transistor (NXP)
MTB10062 - Bi-Color LED Lamp Array (Marktech Corporate)
MTB100A10KRH8 - Dual N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTB100A10KRQ8 - Dual N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTB100N10RKJ3 - N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTB100N15KRL3 - N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)

Other Datasheets by CYStech

Published: Mar 6, 2020 |