* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* ESD protected gate
* Pb-free lead plating and Halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=100°C ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=2.
MTB180A06KH8 Datasheet (832.11 KB)
MTB180A06KH8
CYStech
832.11 KB
Dual n-channel enhancement mode power mosfet.
CYStech Electronics Corp.
Spec. No. : C052H8 Issued Date : 2019.09.06 Revised Date : Page No. : 1/ 10
Dual N-Channel Enhancement Mode Power MOSFET
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