* Simple drive requirement
* Small package outline
* ESD protected gate
* Pb-free lead plating and halogen-free package BVDSS ID@ TA=25°C, VGS=10V RDSON@VGS=10V, ID=1.8A RDSON@VGS=4.5V, ID=1.3A 55V 1.9A 145mΩ(typ) 173mΩ(typ) Symbol MTB180N06KSN3 Outline SOT-23 D
MTB180N06KSN3 Datasheet (344.35 KB)
MTB180N06KSN3
Cystech Electonics
344.35 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp.
60V N-Channel Enhancement Mode MOSFET
MTB180N06KSN3
Spec. No. : C052N3 Issued Date : 2016.12.09 Revised Date : 2016.12.12 P.
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