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MTB180N06KSN3 Datasheet - Cystech Electonics

MTB180N06KSN3 N-Channel Enhancement Mode Power MOSFET

MTB180N06KSN3 Features

* Simple drive requirement

* Small package outline

* ESD protected gate

* Pb-free lead plating and halogen-free package BVDSS ID@ TA=25°C, VGS=10V RDSON@VGS=10V, ID=1.8A RDSON@VGS=4.5V, ID=1.3A 55V 1.9A 145mΩ(typ) 173mΩ(typ) Symbol MTB180N06KSN3 Outline SOT-23 D

MTB180N06KSN3-CystechElectonics.pdf

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Datasheet Details

Part number:

MTB180N06KSN3

Manufacturer:

Cystech Electonics

File Size:

344.35 KB

Description:

N-channel enhancement mode power mosfet.

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MTB180N06KSN3 MTB180N06KSN3 N-Channel Enhancement Mode Power MOSFET Cystech Electonics

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