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MTB1D7N03RH8 - N-Channel Enhancement Mode Power MOSFET

MTB1D7N03RH8 Description

CYStech Electronics Corp.Spec.No.: C638H8 Issued Date : 2019.05.03 Revised Date : 2020.02.25 Page No.: 1/ 11 N-Channel Enhancement Mode Power MO.

MTB1D7N03RH8 Features

* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=20A 30V 131A(silicon limit) 84A(package limit

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Datasheet Details

Part number
MTB1D7N03RH8
Manufacturer
CYStech
File Size
869.80 KB
Datasheet
MTB1D7N03RH8-CYStech.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET CYStech
CYStech MTB1D7N03RH8-like datasheet