* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=20A 30V 131A(silicon limit) 84A(package limit
MTB1D7N03RH8 Datasheet (869.80 KB)
MTB1D7N03RH8
CYStech
869.80 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp.
Spec. No. : C638H8 Issued Date : 2019.05.03 Revised Date : 2020.02.25 Page No. : 1/ 11
N-Channel Enhancement Mode Power MO.
📁 Related Datasheet
MTB1D7N03ATH8 N-Channel Enhancement Mode Power MOSFET (CYStech)
MTB1D7N03E3 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTB1D7N03J3 N-Channel Enhancement Mode Power MOSFET (CYStech)
MTB1D5N03H8 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTB1D8N04E3 N-Channel Enhancement Mode Power MOSFET (CYStech)
MTB1D8NR03E3 N-Channel Enhancement Mode Power MOSFET (CYStech)
MTB10000 LED Lamp Arrays (Marktech Corporate)
MTB10010U NPN microwave power transistor (NXP)
MTB10062 Bi-Color LED Lamp Array (Marktech Corporate)
MTB100A06KRH8 Dual N-Channel Enhancement Mode Power MOSFET (CYStech)
