Datasheet Details
- Part number
- MTB16N25E
- Manufacturer
- Motorola
- File Size
- 259.95 KB
- Datasheet
- MTB16N25E_Motorola.pdf
- Description
- TMOS POWER FET
MTB16N25E Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB16N25E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount De.
MTB16N25E Features
* resent, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electro
MTB16N25E Applications
* that require the use of surface mount components with higher power and lower RDS(on) capabilities. This advanced TMOS E
* FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain
* to
* source diode with a
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