* resent, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electro
MTB16N25E Datasheet (259.95 KB)
MTB16N25E
Motorola
259.95 KB
Tmos power fet.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount
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