MTB16N25E Datasheet - Motorola

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MTB16N25E TMOS POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB16N25E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount De.

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Datasheet Details

Part number:

MTB16N25E

Manufacturer:

Motorola

File Size:

259.95 KB

Description:

TMOS POWER FET

Features

* resent, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electro

Applications

* that require the use of surface mount components with higher power and lower RDS(on) capabilities. This advanced TMOS E
* FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain
* to
* source diode with a

MTB16N25E Distributors

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MTB16N25E TMOS POWER FET Motorola

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