MTB16P04J3 P-Channel Enhancement Mode Power MOSFET

Cystech Electonics

Description

CYStech Electronics Corp.P-Channel Enhancement Mode Power MOSFET Spec.No.: C706J3 Issued Date : 2009.04.23 Revised Date : Page No.: 1/7 MTB16P04.

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Datasheet Specifications

Part number: MTB16P04J3
Manufacturer: Cystech Electonics
File Size: 403.42 KB
Datasheet: MTB16P04J3_CystechElectonics.pdf
Description: P-Channel Enhancement Mode Power MOSFET

Features

* Low Gate Charge
* Simple Drive Requirement
* RoHS compliant & Halogen-free package BVDSS ID RDSON(MAX) -40V -25A 16mΩ Equivalent Circuit MTB16P04J3 Outline TO-252 G：Gate D：Drain S：Source G D S Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbo

Applications

* or systems.
* CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB16P04J3 CYStek Product Specification

MTB16P04J3 Distributors

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MTB16P04J3 P-Channel Enhancement Mode Power MOSFET Cystech Electonics

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