* And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typic
MTB1N100E Datasheet (256.47 KB)
MTB1N100E
Motorola
256.47 KB
Tmos power fet.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTB1N100E/D
™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount
De.
📁 Related Datasheet
MTB10000 LED Lamp Arrays (Marktech Corporate)
MTB10010U NPN microwave power transistor (NXP)
MTB10062 Bi-Color LED Lamp Array (Marktech Corporate)
MTB100A06KRH8 Dual N-Channel Enhancement Mode Power MOSFET (CYStech)
MTB100A10KRH8 Dual N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTB100A10KRQ8 Dual N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTB100N10RKJ3 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTB10N40E TMOS POWER FET (Motorola)
MTB110P08KJ3 P-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTB110P08KN3 P-Channel Enhancement Mode MOSFET (Cystech Electonics)
