Datasheet Specifications
- Part number
- MTB1N100E
- Manufacturer
- Motorola
- File Size
- 256.47 KB
- Datasheet
- MTB1N100E_Motorola.pdf
- Description
- TMOS POWER FET
Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB1N100E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount De.
Features
* And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typicApplications
* that require the use of surface mount components with higher power and lower RDS(on) capabilities. This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageMTB1N100E Distributors
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