Datasheet Details
Part number:
MTB1N100E
Manufacturer:
Motorola
File Size:
256.47 KB
Description:
TMOS POWER FET
Features
* And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typic
MTB1N100E, TMOS POWER FET
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB1N100E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount Designer's MTB1N100E Motorola Preferred Device N Channel Enhancement Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities.
This
MTB1N100E Distributor
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