MTB4N80E TMOS POWER FET

Motorola

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB4N80E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount Des.

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Datasheet Specifications

Part number: MTB4N80E
Manufacturer: Motorola
File Size: 195.75 KB
Datasheet: MTB4N80E_Motorola.pdf
Description: TMOS POWER FET

Features

* ance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasitics were

Applications

* that require the use of surface mount components with higher power and lower RDS(on) capabilities. This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage
* blocking capability without degrading performance over time. In addition, this advanced TMOS E
* F

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MTB4N80E TMOS POWER FET Motorola

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