* Single Drive Requirement
* Low On-resistance
* Fast Switching Characteristic
* Repetitive Avalanche Rated
* Pb-free lead plating and halogen-free package BVDSS ID @ VGS=10V, TA=25°C ID @ VGS=10V, TC=25°C RDSON(TYP) VGS=10V, ID=20A VGS=4.5V, ID=10A 30V
MTB4D0N03BJ3 Datasheet (376.30 KB)
MTB4D0N03BJ3
Cystech Electonics
376.30 KB
N-channel logic level enhancement mode power mosfet.
CYStech Electronics Corp. Spec. No. : C092J3 Issued Date : 2015.10.23 Revised Date : Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOS.
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