* BVDSS ID @ TA=25°C, VGS=10V RDS(ON)@VGS=10V, ID=8A RDS(ON)@VGS=4.5V, ID=6A
* Single Drive Requirement
* Low On-resistance
* Fast Switching Characteristic
* Repetitive Avalanche Rated
* Pb-free & Halogen-free package 40V 11A 8.7 mΩ(typ) 12.4mΩ(typ) Symbol M
MTB012N04Q8 Datasheet (429.66 KB)
MTB012N04Q8
Cystech Electonics
429.66 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp.
Spec. No. : C450Q8 Issued Date : 2017.01.09 Revised Date : Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTB012N0.
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