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MTB013N10RH8 N-Channel Enhancement Mode Power MOSFET

MTB013N10RH8 Description

CYStech Electronics Corp.Spec.No.: C056H8 Issued Date : 2016.08.29 Revised Date : Page No.: 1/10 N-Channel Enhancement Mode Power MOSFET MTB013N.

MTB013N10RH8 Features

* RDSON(TYP) VGS=10V, ID=15A VGS=4.5V, ID=10A
* Single Drive Requirement
* Low On-resistance
* Fast Switching Characteristic
* Repetitive Avalanche Rated
* Pb-free lead plating and Halogen-free package 100V 42A 14.3A 9.8mΩ 11.1mΩ Symbol MTB013N10RH8 G：Gate

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Datasheet Details

Part number
MTB013N10RH8
Manufacturer
CYStech Electronics
File Size
572.17 KB
Datasheet
MTB013N10RH8-CYStechElectronics.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET CYStech Electronics
CYStech Electronics MTB013N10RH8-like datasheet