MTB013N10RH8 N-Channel Enhancement Mode Power MOSFET

CYStech Electronics

Description

CYStech Electronics Corp.Spec.No.: C056H8 Issued Date : 2016.08.29 Revised Date : Page No.: 1/10 N-Channel Enhancement Mode Power MOSFET MTB013N.

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Datasheet Specifications

Part number: MTB013N10RH8
Manufacturer: CYStech Electronics
File Size: 572.17 KB
Datasheet: MTB013N10RH8-CYStechElectronics.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* RDSON(TYP) VGS=10V, ID=15A VGS=4.5V, ID=10A
* Single Drive Requirement
* Low On-resistance
* Fast Switching Characteristic
* Repetitive Avalanche Rated
* Pb-free lead plating and Halogen-free package 100V 42A 14.3A 9.8mΩ 11.1mΩ Symbol MTB013N10RH8 G：Gate

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MTB013N10RH8 N-Channel Enhancement Mode Power MOSFET CYStech Electronics

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