* RDSON(TYP) VGS=10V, ID=15A VGS=4.5V, ID=10A
* Single Drive Requirement
* Low On-resistance
* Fast Switching Characteristic
* Repetitive Avalanche Rated
* Pb-free lead plating and Halogen-free package 100V 42A 14.3A 9.8mΩ 11.1mΩ Symbol MTB013N10RH8 G：Gate
MTB013N10RH8 Datasheet (572.17 KB)
MTB013N10RH8
CYStech Electronics
572.17 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp.
Spec. No. : C056H8 Issued Date : 2016.08.29 Revised Date : Page No. : 1/10
N-Channel Enhancement Mode Power MOSFET
MTB013N.
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