MTB013N10RH8 Datasheet - CYStech Electronics

MTB013N10RH8 N-Channel Enhancement Mode Power MOSFET

MTB013N10RH8 Features

* RDSON(TYP) VGS=10V, ID=15A VGS=4.5V, ID=10A

* Single Drive Requirement

* Low On-resistance

* Fast Switching Characteristic

* Repetitive Avalanche Rated

* Pb-free lead plating and Halogen-free package 100V 42A 14.3A 9.8mΩ 11.1mΩ Symbol MTB013N10RH8 G：Gate

Datasheet Details

MTB013N10RH8

CYStech Electronics

572.17 KB

N-channel enhancement mode power mosfet.

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