* Single Drive Requirement
* Low On-resistance
* Fast Switching Characteristic
* Repetitive Avalanche Rated
* Pb-free & Halogen-free package BVDSS ID @ TA=25°C, VGS=10V RDS(ON)@VGS=10V, ID=10A RDS(ON)@VGS=4.5V, ID=8A 100V 10A 10.3 mΩ(typ) 12.3 mΩ(typ) Symbo
MTB013N10RQ8 Datasheet (429.74 KB)
MTB013N10RQ8
CYStech Electronics
429.74 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTB013N10RQ8
Spec. No. : C053Q8 Issued Date : 2016.08.26 Revised Date : 2016.08.29 .
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