MTB030P06KH8 Datasheet - CYStech Electronics

MTB030P06KH8 P-Channel Enhancement Mode Power MOSFET

MTB030P06KH8 Features

* RDS(ON)@VGS=-10V, ID=-6A RDS(ON)@VGS=-4.5V, ID=-4A

* Low On Resistance

* Simple Drive Requirement

* Low Gate Charge

* Fast Switching Characteristic

* ESD protected gate

* RoHS compliant package RDS(ON)@VGS=-4V, ID=-3A -60V -34A -5.9A 21.4 mΩ(typ) 3

Datasheet Details

MTB030P06KH8

CYStech Electronics

569.58 KB

P-channel enhancement mode power mosfet.

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