MTB030P06KH8 Datasheet PDF (P-Channel Enhancement Mode Power MOSFET) | Download CYStech Electronics MTB030P06KH8

MTB030P06KH8 - P-Channel Enhancement Mode Power MOSFET

Features

RDS(ON)@VGS=-10V, ID=-6A RDS(ON)@VGS=-4.5V, ID=-4A.
Low On Resistance.
Simple Drive Requirement.
Low Gate Charge.
Fast Switching Characteristic.
ESD protected gate.
RoHS compliant package RDS(ON)@VGS=-4V, ID=-3A -60V -34A -5.9A 21.4 mΩ(typ) 35.6 mΩ(typ) 42.6 mΩ(typ) Symbol MTB030P06KH8 Outline Pin 1 DFN5×6 G：Gate D：Drain S：Source Ordering Information Device MTB030P06KH8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free.

Datasheet Details

Part number	MTB030P06KH8
Manufacturer	CYStech Electronics
File Size	569.58 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	MTB030P06KH8 Datasheet
Additional preview pages of the MTB030P06KH8 datasheet.

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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C104H8 Issued Date : 2016.04.29 Revised Date : Page No. : 1/10 P-Channel Enhancement Mode Power MOSFET MTB030P06KH8 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C Features RDS(ON)@VGS=-10V, ID=-6A RDS(ON)@VGS=-4.5V, ID=-4A • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • ESD protected gate • RoHS compliant package RDS(ON)@VGS=-4V, ID=-3A -60V -34A -5.9A 21.4 mΩ(typ) 35.6 mΩ(typ) 42.

Published: Oct 26, 2016 |