* RDS(ON)@VGS=-10V, ID=-6A RDS(ON)@VGS=-4.5V, ID=-4A
* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* ESD protected gate
* RoHS compliant package RDS(ON)@VGS=-4V, ID=-3A -60V -34A -5.9A 21.4 mΩ(typ) 3
MTB030P06KH8 Datasheet (569.58 KB)
MTB030P06KH8
CYStech Electronics
569.58 KB
P-channel enhancement mode power mosfet.
CYStech Electronics Corp. Spec. No. : C104H8 Issued Date : 2016.04.29 Revised Date : Page No. : 1/10 P-Channel Enhancement Mode Power MOSFET MTB030P.
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