* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=15A RDS(ON)@VGS=4.5V, ID=10A 100V 42A 9A 12.5mΩ
MTB013N10RJ3 Datasheet (363.80 KB)
MTB013N10RJ3
Cystech Electonics
363.80 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTB013N10RJ3
Spec. No. : C056J3 Issued Date : 2016.11.02 Revised Date : Page No. : .
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