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MTB013N10RJ3 N-Channel Enhancement Mode Power MOSFET

MTB013N10RJ3 Description

CYStech Electronics Corp.N-Channel Enhancement Mode Power MOSFET MTB013N10RJ3 Spec.No.: C056J3 Issued Date : 2016.11.02 Revised Date : Page No.: .

MTB013N10RJ3 Features

* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=15A RDS(ON)@VGS=4.5V, ID=10A 100V 42A 9A 12.5mΩ

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Datasheet Details

Part number
MTB013N10RJ3
Manufacturer
Cystech Electonics
File Size
363.80 KB
Datasheet
MTB013N10RJ3-CystechElectonics.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET Cystech Electonics
Cystech Electonics MTB013N10RJ3-like datasheet