* Single Drive Requirement
* Low On-resistance
* Fast Switching Characteristic
* Repetitive Avalanche Rated
* Pb-free & Halogen-free package BVDSS ID @ TA=25°C, VGS=10V RDS(ON)@VGS=10V, ID=10A RDS(ON)@VGS=4.5V, ID=8A 100V 10A 10.3 mΩ(typ) 12.3 mΩ(typ) Symbol MTB012N10RQ8 Outl
MTB012N10RQ8 Datasheet (619.14 KB)
MTB012N10RQ8
Cystech Electonics
619.14 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTB012N10RQ8
Spec. No. : C056Q8 Issued Date : 2016.08.26 Revised Date : 2016.11.08 .
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