MTB013N10RE3 N-Channel Enhancement Mode Power MOSFET

Cystech Electonics

Description

CYStech Electronics Corp.N-Channel Enhancement Mode Power MOSFET MTB013N10RE3 Spec.No.: C056E3 Issued Date : 2016.11.01 Revised Date : Page No.: .

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Datasheet Specifications

Part number: MTB013N10RE3
Manufacturer: Cystech Electonics
File Size: 347.15 KB
Datasheet: MTB013N10RE3-CystechElectonics.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=20A 100V 53A 9.6A 11.8 mΩ(typ) 13.4 mΩ(typ)

MTB013N10RE3 Distributors

📁 Related Datasheet

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MTB013N10RE3 N-Channel Enhancement Mode Power MOSFET Cystech Electonics

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