MTB013N10RE3 - N-Channel Enhancement Mode Power MOSFET

Cystech Electonics

Datasheet Details

Part number	MTB013N10RE3
Manufacturer	Cystech Electonics
File Size	347.15 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTB013N10RE3-CystechElectonics.pdf

Low On Resistance.
Simple Drive Requirement.
Low Gate Charge.
Fast Switching Characteristic.
RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=20A 100V 53A 9.6A 11.8 mΩ(typ) 13.4 mΩ(typ) Symbol MTB013N10RE3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information Device Package Shipping MTB013N10RE3-0-UB-X TO-220 (Pb-free lead plating package) 50 pcs/tube, 20 tubes/bo.

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Published: Dec 4, 2016 |