* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=20A 100V 53A 9.6A 11.8 mΩ(typ) 13.4 mΩ(typ)
MTB013N10RE3 Datasheet (347.15 KB)
MTB013N10RE3
Cystech Electonics
347.15 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTB013N10RE3
Spec. No. : C056E3 Issued Date : 2016.11.01 Revised Date : Page No. : .
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