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MTD1N60E TMOS POWER FET

MTD1N60E Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD1N60E/D Designer's TMOS E-FET .™ Power Field Effect Transistor DPAK for Surface Mo.

MTD1N60E Features

* e not present, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power

MTD1N60E Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Robust High Voltage Termination

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Datasheet Details

Part number
MTD1N60E
Manufacturer
Motorola
File Size
215.36 KB
Datasheet
MTD1N60E_Motorola.pdf
Description
TMOS POWER FET

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TMOS POWER FET Motorola
Motorola MTD1N60E-like datasheet