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MTD8N06E - TMOS POWER FET

Key Features

  • equation for voltage change in an RC network. The equations are: td(on) = RG Ciss In [VGG/(VGG.
  • VGSP)] td(off) = RG Ciss In (VGG/VGSP) 1200 VDS = 0 V 1000 C,.

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Full PDF Text Transcription for MTD8N06E (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MTD8N06E. For precise diagrams, and layout, please refer to the original PDF.

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD8N06E/D Designer's TMOS E-FET .™ Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancemen...

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er Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected www.DataSheet4U.com voltage transients.

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