MTP75N05HD Datasheet | Motorola Semiconductor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP75N05HD/D Designer's ™ HDTMOS E-FET Power Field Effect Transistor N- Channel Enhancement- Mode Silicon Gate This advanced high- cell density HDTMOS E- FET is designed to withstand high energy in the avalanche and mutation modes. This new energy- efficient design also offers a drain- to- source diode with a fast recovery time. Designed for low- voltage, high- speed switching applications in power supplies, converters and PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs .. where inductive loads are switched, and to offer additional safety margin against unexpected voltage transients. - - - - - - Ultra Low RDS(on), High- Cell Density, HDTMOS SPICE Parameters Available Diode is Characterized for Use in Bridge Circuits Diode Exhibits High Speed, Yet Soft Recovery IDSS and VDS(on) Specified at Elevated Temperature Avalanche Energy Specified ™ Data Sheet Motorola Preferred Device TMOS POWER FET 75 AMPERES RDS(on) = 9.5 mΩ 50 VOLTS ® G S CASE 221A- 06, Style 5 TO- 220AB MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain- Source Voltage Drain- Gate Voltage (RGS = 1.0 MΩ) Gate- Source Voltage - Continuous Drain Current - Continuous Drain Current - Continuous @ 100°C Drain Current - Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Single Pulse Drain- to- Source Avalanche Energy - Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vpk, IL = 75 Apk, L = 0.177 m H, RG = 25 Ω) Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds Symbol VDSS VDGR VGS ID ID IDM PD TJ, Tstg EAS RθJC RθJA TL Value 50 50 ± 20 75 65 225 150 1 - 55 to 175 500 1.00 62.5 260 Unit Vdc Vdc Vdc Adc Apk Watts W/°C °C m J °C/W °C Designer’s Data for “Worst Case” Conditions -...